Principal Engineer DRAM Pathfinding

Company: Micron Memory Malaysia Sdn Bhd
Location: San Jose
Posted on: March 20, 2025

Job Description:

Our vision is to transform how the world uses information to enrich life for all.Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.As the Principal Engineer, DRAM Pathfinding and Architecture in the Mobile Business Unit, you will lead the DRAM pathfinding activities, and establish a deeper understanding of Micron's Memory technologies and capabilities. You will be responsible for developing the Memory strategy and architectures optimized for next-generation AI applications on mobile devices.You will be responsible for building strong technical relationships with system architects and key technologists across the industry. You will have the opportunity to represent Micron at technical conferences and consortia. Your role in those industry engagements will be to drive pathfinding discussions, influence design-in decisions, and negotiate product requirements with our ecosystem partners and customers. Internally, you will partner with Micron's top R&D, design, test, and product engineers to ensure the successful implementation of new product concepts. Working closely with Product and Business Development Managers you will ensure that each technical decision is aligned with our business strategy, and ultimately help bring these outstanding new products to our customers!ResponsibilitiesDefine

• Pathfinding and solution strategy for achieving the product market requirements of Micron's next-generation LPDDR products partnering closely with Micron's DRAM design team.
• Innovative solutions to break through the scaling wall.
• Leadership product architectures, aligning with the diverse segment requirements and Micron's IP and process strategies.Develop
  • Fabrication process - including CMOS and interconnect capabilities.
  • Functionality of LPDRAM, emerging memory, and other devices.
  • System topologies and interconnects - including details on protocols, PHY's, and signaling (SI/PI).
  • LPDRAM interaction with the mobile SoCs - especially for shared timing and power budgets.
  • Performance, power, cost, complexity, quality, and reliability implications of these solutions.Understand
    • Understand the problems to be solved, priorities, and optimization points for customer systems.
    • Analyze technology trends in the industry.
    • Identify competitive solutions and analyze value propositions.
    • Ensure successful design-in of new solutions through close collaboration with our end customers.Engage
      • Develop relationships with counterparts at key customers and ecosystem enablers.
      • Participate in standards organizations to create proposals and specifications.
      • Participate and speak at industry conferences.Forge
        • Create new product concepts and intellectual property.
        • Draft internal product design requirements.
        • Prepare customer technical collateral including product specifications and training.Minimum Qualification:
          • 10 years of proven experience in DRAM development.
          • Expertise in DRAM device physics, circuit design, system architecture, performance optimization.
          • Strong background in DRAM process integration, scaling, and device physics.
          • Strong knowledge of DRAM architecture, circuit design, layout, and specifications.
          • A proven leader in driving innovative solutions in DRAM technology.
          • Strong communication, presentation, and interpersonal skills.
          • Ability to work independently and creatively in a fast-paced environment.
          • Curiosity and passion for learning new technologies and solving challenging problems.
          • Must be a strong individual contributor as well as a team player.Education:
            • Preferred Masters of Science or PhD in Computer/Electrical Engineering or System Architecture or at least 15 years of related industry experience.The US base salary range that Micron Technology estimates it could pay for this full-time position is: $190,500.00 - $324,000.00.Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.
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Keywords: Micron Memory Malaysia Sdn Bhd, San Jose , Principal Engineer DRAM Pathfinding, Engineering , San Jose, California